Skip to main navigation Skip to search Skip to main content

Investigation of the electron distribution in CdxHg1-xTe superlattices by far infrared and Raman spectroscopy

  • S. K. Kang
  • , T. Dumelow
  • , T. J. Parker
  • , R. J. York
  • , S. R P Smith
  • , S. N. Ershov
  • , M. I. Vasilevski

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

Far infrared spectroscopy may be used in obtaining characterisation information on super-lattices containing free carriers; such information complements those obtained by Raman spectroscopy. CdxHg1-xTe (CMT) superlattice, grown on a GaAs substrate by plasma enhanced MOCVD was measured in both infrared and Raman spectroscopy. Phonon frequencies were calculated using random element isodisplacement (REI) model. Results show that a combination of far infrared and Raman techniques may be used to gain insights into electron densities and distributions in CMT superlattices.
Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages224-225
Volume2104
ISBN (Print)819413925
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 18th International Conference on Infrared and Millimeter Waves - Colchester, Engl
Duration: 6 Sept 199310 Sept 1993

Publication series

Name
Volume2104
ISSN (Electronic)0277-786X

Conference

ConferenceProceedings of the 18th International Conference on Infrared and Millimeter Waves
CityColchester, Engl
Period6/09/9310/09/93

Fingerprint

Dive into the research topics of 'Investigation of the electron distribution in CdxHg1-xTe superlattices by far infrared and Raman spectroscopy'. Together they form a unique fingerprint.

Cite this