TY - GEN
T1 - Investigation of the behaviors of various electroplated copper films during CMP
AU - Feng, H. P.
AU - Cheng, M. Y.
AU - Wang, Y. Y.
AU - Wan, C. C.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2006
Y1 - 2006
N2 - The behaviors of various electroplated copper films during CMP are important for removal mechanism and defect generation. This article was to study the characteristics of various copper films during CMP, including impurity effect and current density effect. Potentiodynamic polarization method was used to understand the removal behaviors. XRD and SIMS were applied to investigate the film texture and impurity content. Defect performance was decided in optical scan method and SEM reviewing. The research showed that (111)/(200) texture ratio determined removal rate and voids located in grain boundaries. Removal rate and void defects decreased with increasing (111)/(200) ratio. High (111)/(200) ratio has strong chemical resistance during polishing because (111) is the closed packed plane in the fee structure. For impurity study, carbon and sulfur are impure atoms to weaken Cu grain boundaries to generate more void defects, but are insufficient to determine the removal rate. Furthermore, a novel phenomenon was observed that interconnect surface generate copper extrusion with time after polishing. AES proved that the sulfur content of grain boundaries induce this reaction. Based on above studies, we attempt to describe the relation between copper film properties and polishing performance.
AB - The behaviors of various electroplated copper films during CMP are important for removal mechanism and defect generation. This article was to study the characteristics of various copper films during CMP, including impurity effect and current density effect. Potentiodynamic polarization method was used to understand the removal behaviors. XRD and SIMS were applied to investigate the film texture and impurity content. Defect performance was decided in optical scan method and SEM reviewing. The research showed that (111)/(200) texture ratio determined removal rate and voids located in grain boundaries. Removal rate and void defects decreased with increasing (111)/(200) ratio. High (111)/(200) ratio has strong chemical resistance during polishing because (111) is the closed packed plane in the fee structure. For impurity study, carbon and sulfur are impure atoms to weaken Cu grain boundaries to generate more void defects, but are insufficient to determine the removal rate. Furthermore, a novel phenomenon was observed that interconnect surface generate copper extrusion with time after polishing. AES proved that the sulfur content of grain boundaries induce this reaction. Based on above studies, we attempt to describe the relation between copper film properties and polishing performance.
KW - Copper plating
KW - Current density
KW - Defect
KW - Impurity
KW - Removal rate
KW - Texture
UR - https://www.scopus.com/pages/publications/33845223861
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33845223861&origin=recordpage
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 0976798565
SN - 9780976798569
VL - 1
T3 - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
SP - 248
EP - 251
BT - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
T2 - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Y2 - 7 May 2006 through 11 May 2006
ER -