Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • O. M. Steffensen
  • D. Birkedal
  • J. Hanberg
  • O. Albrektsen
  • S. W. Pang

Detail(s)

Original languageEnglish
Pages (from-to)1528-1532
Journal / PublicationJournal of Applied Physics
Volume78
Issue number3
Publication statusPublished - 1 Aug 1995
Externally publishedYes

Abstract

Through low-temperature photoluminescence (PL), the influence of reactive-ion etching (RIE) processing of InP/InGaAs multiple quantum-well structures has been investigated. A specially designed structure allowed the damage depth to be obtained from the PL spectra. Results show that the RIE treatment did not severely degrade the sample quality. The low-energy bombardment by ions produced during RIE does not decrease the luminescence intensity substantially.

Citation Format(s)

Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence. / Steffensen, O. M.; Birkedal, D.; Hanberg, J. et al.
In: Journal of Applied Physics, Vol. 78, No. 3, 01.08.1995, p. 1528-1532.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review