Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method

Zheng Zhong, Yong-Xin Guo, Jianjun Zhou, Chen Chen

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

1 Citation (Scopus)

Abstract

Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs. © 2012 IEEE.
Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding
Pages163-166
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Nanjing, China
Duration: 18 Sept 201220 Sept 2012

Publication series

NameIEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding

Conference

Conference2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012
PlaceChina
CityNanjing
Period18/09/1220/09/12

Bibliographical note

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