Inverse Hall-Petch relationship in the nanostructured TiO2 : Skin-depth energy pinning versus surface preferential melting

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Original languageEnglish
Article number73503
Journal / PublicationJournal of Applied Physics
Issue number7
Publication statusPublished - 1 Oct 2010


The functional dependence of stress, elastic modulus, melting point, and their interdependence on the identities (bond order, nature, length, and strength) of a representative bond of the specimen has been established for deeper insight into the transition from the conventional Hall-Petch relationship (HPR) to the inverse HPR (IHPR) for nanostructured TiO2. Theoretical reproduction of the observed inverse HPR suggests that the intrinsic competition between the energy-density gain (elastic modulus enhancement) and the cohesive-energy remnant (melting point depression) in the grain boundaries originates and the extrinsic competition between the activation and the inhibition of atomic dislocations activates the IHPR. © 2010 American Institute of Physics.