Intrinsic stress evolution in diamond films prepared in a CH4-H2-NH3 hot filament chemical vapor deposition system

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Author(s)

  • N. G. Shang
  • C. S. Lee
  • Z. D. Lin
  • I. Bello
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)1388-1392
Journal / PublicationDiamond and Related Materials
Volume9
Issue number7
Publication statusPublished - 3 Jul 2000

Abstract

The intrinsic stress in diamond films prepared in a CH4-H2-NH3 hot filament chemical vapor deposition system has been investigated by the substrate curvature technique as a function of film thickness (2.2-50 μm) and ammonia concentration (0-1.4%). Our results indicated that the film stress changed from compressive to tensile with the increase of film thickness and diamond quality at a constant ammonia concentration of 0.5%. The existence of a non-diamond phase was found to be beneficial to the relaxation of intrinsic tensile stress in the films. The intrinsic stress in diamond films was tensile at an ammonia concentration from 0 to 1.4%, while the maximum tensile stress existed at 0.75% NH3. The possible origin of intrinsic tensile stress was discussed. © 2000 Elsevier Science S.A.

Research Area(s)

  • Ammonia, Diamond, HFCVD, Intrinsic stress