Interplay Between Grain Boundary Grooving, Stress, and Dealloying in the Agglomeration of NiSi1 − xGex Films

H. B. Yao; M. Bouville; D. Z. Chi; H. P. Sun; X. Q. Pan; D. J. Srolovitz; D. Mangelinck

doi:10.1149/1.2400726

Interplay Between Grain Boundary Grooving, Stress, and Dealloying in the Agglomeration of NiSi_1 − xGe_x Films

H. B. Yao, M. Bouville, D. Z. Chi, H. P. Sun, X. Q. Pan, D. J. Srolovitz, D. Mangelinck

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

11 Citations (Scopus)

Abstract

Germanosilicides, especially those formed on compressive substrates, are less stable than silicides against agglomeration. By studying the solid-state reaction of Ni thin film on strained Si_0.8 Ge_0.2 (001), we show that nickel germanosilicide is different from nickel silicide and nickel germanide in several respects: the grains are smaller and faceted, the groove angle is sharper, and dealloying takes place. The germanium out-diffusion creates a stress in the film which favors grooving and agglomeration.

Original language	English
Pages (from-to)	H53-H55
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	2
Online published	13 Dec 2006
DOIs	https://doi.org/10.1149/1.2400726
Publication status	Published - Feb 2007
Externally published	Yes

Research Keywords

nickel compounds
silicon compounds
semiconductor materials
semiconductor thin films
grain boundary diffusion
interface structure

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title = "Interplay Between Grain Boundary Grooving, Stress, and Dealloying in the Agglomeration of NiSi1 − xGex Films",

abstract = "Germanosilicides, especially those formed on compressive substrates, are less stable than silicides against agglomeration. By studying the solid-state reaction of Ni thin film on strained Si0.8 Ge0.2 (001), we show that nickel germanosilicide is different from nickel silicide and nickel germanide in several respects: the grains are smaller and faceted, the groove angle is sharper, and dealloying takes place. The germanium out-diffusion creates a stress in the film which favors grooving and agglomeration.",

keywords = "nickel compounds, silicon compounds, semiconductor materials, semiconductor thin films, grain boundary diffusion, interface structure",

author = "Yao, {H. B.} and M. Bouville and Chi, {D. Z.} and Sun, {H. P.} and Pan, {X. Q.} and Srolovitz, {D. J.} and D. Mangelinck",

year = "2007",

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T1 - Interplay Between Grain Boundary Grooving, Stress, and Dealloying in the Agglomeration of NiSi1 − xGex Films

AU - Yao, H. B.

AU - Bouville, M.

AU - Chi, D. Z.

AU - Sun, H. P.

AU - Pan, X. Q.

AU - Srolovitz, D. J.

AU - Mangelinck, D.

PY - 2007/2

Y1 - 2007/2

N2 - Germanosilicides, especially those formed on compressive substrates, are less stable than silicides against agglomeration. By studying the solid-state reaction of Ni thin film on strained Si0.8 Ge0.2 (001), we show that nickel germanosilicide is different from nickel silicide and nickel germanide in several respects: the grains are smaller and faceted, the groove angle is sharper, and dealloying takes place. The germanium out-diffusion creates a stress in the film which favors grooving and agglomeration.

AB - Germanosilicides, especially those formed on compressive substrates, are less stable than silicides against agglomeration. By studying the solid-state reaction of Ni thin film on strained Si0.8 Ge0.2 (001), we show that nickel germanosilicide is different from nickel silicide and nickel germanide in several respects: the grains are smaller and faceted, the groove angle is sharper, and dealloying takes place. The germanium out-diffusion creates a stress in the film which favors grooving and agglomeration.

KW - nickel compounds

KW - silicon compounds

KW - semiconductor materials

KW - semiconductor thin films

KW - grain boundary diffusion

KW - interface structure

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DO - 10.1149/1.2400726

M3 - RGC 21 - Publication in refereed journal

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JF - Electrochemical and Solid-State Letters

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