Intermediate band induced by p-block metalloid antimony in SnS2 for higher solar energy utilization

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Wei Zhao
  • Fuqiang Huang

Detail(s)

Original languageEnglish
Article number101333
Journal / PublicationMaterials Today Communications
Volume24
Online published13 Jun 2020
Publication statusPublished - Sept 2020

Abstract

Semiconductors with intermediate bands have attracted tremendous attention due to their superior solar energy utilization. Herein, we propose a simple approach to introduce the intermediate band through substituting tin by p-block metalloid antimony in SnS2. Experimentally, Sn1-xSbxS2 (x up to 0.06) semiconductors possessing an intermediate band were successfully synthesized through solid state reactions. After antimony doping, two absorption edges appear at 2.31 eV and 1.63 eV in the visible light region, and one absorption shoulder starting at 0.68 eV emerges in the infrared region, as observed from the UV–vis-NIR absorption spectra. These typical intermediate band absorption features are consistent with our first principles calculations. The state of the intermediate band of Sn1-xSbxS2 is mainly composed of the Sb-5s orbital from maximally-localized Wannier function analysis. Owing to the antimony intermediate band extending the solar absorption range, Sn1-xSbxS2 semiconductors exhibit a higher utilization of solar energy compared with pristine SnS2.

Research Area(s)

  • First principles calculations, Intermediate band, p-block metalloid antimony, Solar energy utilization, Solid state reaction

Citation Format(s)

Intermediate band induced by p-block metalloid antimony in SnS2 for higher solar energy utilization. / Hu, Keyan; Gu, Yuhao; Xu, Zian et al.
In: Materials Today Communications, Vol. 24, 101333, 09.2020.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review