Interfacial structure of a Σ9 and defect structure at junctions of Σ3-Σ9-Σ3 in diamond film

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Original languageEnglish
Pages (from-to)121-128
Journal / PublicationMaterials Science Forum
Online publishedJul 1995
Publication statusPublished - 1995
Externally publishedYes


Title2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance
Period1 - 5 November 1993


High resolution electron microscopy was carried out to study the structure of the defect structure at junctions of Σ3-Σ9-Σ3 in diamond film. A short segment of Σ9 (221) boundary with length of about 2 nm is found to be bounded by the Σ3 (111) twins. One of the Σ3 (111) twins is found to expand 0.06 nm normal to the boundary plane. A junction dislocation related to different rigid body translation of three grains is observed in the triple junction. We have applied the coincidence-site-lattice (CSL) model to explain the observed structure of Σ3-Σ9-Σ3 junction. The CSL model helps us to understand the relative rigid body translation between the neighbouring grains, However, unlike a Σ9 boundary in the Si crystal, the short segment of Σ9 boundary in the CVD diamond film can not be explained by the geometric model constructed from CSL dichromatic pattern. It is thought that the equilibrium structure of the short Σ9 boundary is affected by the adjacent Σ3 twins and the trapped H atom in the CVD diamond.