Interfacial reactions of Pt-based Schottky contacts on InGaP

L. H. Chu; E. Y. Chang; Y. H. Wu; J. C. Huang; Q. Y. Chen; W. K. Chu; H. W. Seo; C. T. Lee

doi:10.1063/1.2834849

Interfacial reactions of Pt-based Schottky contacts on InGaP

L. H. Chu
, E. Y. Chang
, Y. H. Wu
, J. C. Huang
, Q. Y. Chen
, W. K. Chu
, H. W. Seo
, C. T. Lee

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm -thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 °C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 °C for 10 min. Prolonging the annealing to 3 h led to formation of Ga2 Pt and Ga Pt3 phases in InGaP and Schottky diodes degraded after these new phases were observed. © 2008 American Institute of Physics.

Original language	English
Article number	082108
Journal	Applied Physics Letters
Volume	92
Issue number	8
DOIs	https://doi.org/10.1063/1.2834849
Publication status	Published - 2008
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{a5c8662fc50141e5a089eb3c17995559,

title = "Interfacial reactions of Pt-based Schottky contacts on InGaP",

abstract = "We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm -thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 °C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 °C for 10 min. Prolonging the annealing to 3 h led to formation of Ga2 Pt and Ga Pt3 phases in InGaP and Schottky diodes degraded after these new phases were observed. {\textcopyright} 2008 American Institute of Physics.",

author = "Chu, \{L. H.\} and Chang, \{E. Y.\} and Wu, \{Y. H.\} and Huang, \{J. C.\} and Chen, \{Q. Y.\} and Chu, \{W. K.\} and Seo, \{H. W.\} and Lee, \{C. T.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2008",

doi = "10.1063/1.2834849",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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}

TY - JOUR

T1 - Interfacial reactions of Pt-based Schottky contacts on InGaP

AU - Chu, L. H.

AU - Chang, E. Y.

AU - Wu, Y. H.

AU - Huang, J. C.

AU - Chen, Q. Y.

AU - Chu, W. K.

AU - Seo, H. W.

AU - Lee, C. T.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2008

Y1 - 2008

N2 - We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm -thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 °C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 °C for 10 min. Prolonging the annealing to 3 h led to formation of Ga2 Pt and Ga Pt3 phases in InGaP and Schottky diodes degraded after these new phases were observed. © 2008 American Institute of Physics.

AB - We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm -thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 °C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 °C for 10 min. Prolonging the annealing to 3 h led to formation of Ga2 Pt and Ga Pt3 phases in InGaP and Schottky diodes degraded after these new phases were observed. © 2008 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/40049100819

UR - https://www.scopus.com/pages/publications/40049100819#tab=impact

U2 - 10.1063/1.2834849

DO - 10.1063/1.2834849

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082108

ER -

Interfacial reactions of Pt-based Schottky contacts on InGaP

Abstract

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