TY - JOUR
T1 - Interfacial reaction behavior of Pt, Pd, and Ni on ZnSe
AU - Duxstad, K. J.
AU - Haller, E. E.
AU - Yu, K. M.
AU - Bourret, E. D.
AU - Lin, X. W.
AU - Ruvimov, S.
AU - Liliental-Weber, Z.
AU - Washburn, J.
PY - 1997/7
Y1 - 1997/7
N2 - The solid-state reactions of Pt, Pd, and Ni thin film contacts on ZnSe were studied. Pd has been observed to react at 200 °C to form a ternary, epitaxial phase, Pd5+xZnSe. This phase is stable up to 450 °C, when Pd begins to diffuse through the ZnSe into the GaAs substrate. Pt begins to react at 575 °C and forms a layer of Pt5Se4 at the Pt/ZnSe interface. Above the interfacial layer there is a Pt-Zn solid solution, but no Pt-Zn phases were observed. After annealing at 675 °C, the Pt°Se° phase is no longer observed and Pt-Zn phases form. A small amount of interdiffusion at the Ni/ZnSe interface has been observed by transmission electron microscopy after annealing at 300 °C. Annealing at 425 °C results in the formation of laterally separated grains of a metastable Nix;Se phase. After annealing at 450 °C, grains of NiSe are observed. The similarities between these reactions and the near-noble metal reactions on Si and GaAs are discussed as well as the possibility of using these reactions for forming electrical contacts to ZnSe. © 1997 American Vacuum Society.
AB - The solid-state reactions of Pt, Pd, and Ni thin film contacts on ZnSe were studied. Pd has been observed to react at 200 °C to form a ternary, epitaxial phase, Pd5+xZnSe. This phase is stable up to 450 °C, when Pd begins to diffuse through the ZnSe into the GaAs substrate. Pt begins to react at 575 °C and forms a layer of Pt5Se4 at the Pt/ZnSe interface. Above the interfacial layer there is a Pt-Zn solid solution, but no Pt-Zn phases were observed. After annealing at 675 °C, the Pt°Se° phase is no longer observed and Pt-Zn phases form. A small amount of interdiffusion at the Ni/ZnSe interface has been observed by transmission electron microscopy after annealing at 300 °C. Annealing at 425 °C results in the formation of laterally separated grains of a metastable Nix;Se phase. After annealing at 450 °C, grains of NiSe are observed. The similarities between these reactions and the near-noble metal reactions on Si and GaAs are discussed as well as the possibility of using these reactions for forming electrical contacts to ZnSe. © 1997 American Vacuum Society.
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U2 - 10.1116/1.589504
DO - 10.1116/1.589504
M3 - RGC 21 - Publication in refereed journal
SN - 0734-211X
VL - 15
SP - 891
EP - 898
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 4
ER -
