Interfacial reaction and schottky barrier in metal-silicon systems

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)284-287
Journal / PublicationPhysical Review Letters
Volume44
Issue number4
Publication statusPublished - 1980
Externally publishedYes

Abstract

Electronic states at the metal-silicon interface have previously been postulated in order to explain the pinning of the Fermi level, and the origin of these states has been a matter of some dispute. We propose here that in a reactive interface, such as the interface between Si and transition metals, physical properties of the interface are related to an interfacial layer, and that the relationship is manifest through the correlation between Schottky barrier height and eutectic temperature. © 1980 The American Physical Society.

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Citation Format(s)

Interfacial reaction and schottky barrier in metal-silicon systems. / Ottaviani, G.; Tu, K. N.; Mayer, J. W.
In: Physical Review Letters, Vol. 44, No. 4, 1980, p. 284-287.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review