Interfacial reaction and schottky barrier in metal-silicon systems
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 284-287 |
| Journal / Publication | Physical Review Letters |
| Volume | 44 |
| Issue number | 4 |
| Publication status | Published - 1980 |
| Externally published | Yes |
Link(s)
Abstract
Electronic states at the metal-silicon interface have previously been postulated in order to explain the pinning of the Fermi level, and the origin of these states has been a matter of some dispute. We propose here that in a reactive interface, such as the interface between Si and transition metals, physical properties of the interface are related to an interfacial layer, and that the relationship is manifest through the correlation between Schottky barrier height and eutectic temperature. © 1980 The American Physical Society.
Bibliographic Note
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Citation Format(s)
Interfacial reaction and schottky barrier in metal-silicon systems. / Ottaviani, G.; Tu, K. N.; Mayer, J. W.
In: Physical Review Letters, Vol. 44, No. 4, 1980, p. 284-287.
In: Physical Review Letters, Vol. 44, No. 4, 1980, p. 284-287.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
