Interfacial effects on characteristics of a-Si TFT

X. Zou; D. P. Webb; Y. C. Chan; Y. W. Lam; Z. Xu

doi:10.1109/asid.1997.631401

Interfacial effects on characteristics of a-Si TFT

X. Zou, D. P. Webb, Y. C. Chan, Y. W. Lam, Z. Xu

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

The concept of effective density of interface states at a-SiNx:H/a-Si:H interface has been used to analyze the performance of a-Si TFT theoretically, such as field effect, flat band voltage, subthreshold characteristics, as well as experimental research on a-Si TFT. The transfer characteristics of various a-Si TFT and the sub-threshold characteristic parameter S, with different fabrication conditions, have verified the conclusions drawn up from the theoretical analysis in this paper.

Original language	English
Title of host publication	Proceedings of the Fourth Asian Symposium on Information Display
Publisher	IEEE
Pages	69-72
ISBN (Print)	962-8273-01-9
DOIs	https://doi.org/10.1109/asid.1997.631401
Publication status	Published - Feb 1997
Event	4th Asian Symposium on Information Display - Hong Kong, China Duration: 13 Feb 1997 → 14 Feb 1997

Conference

Conference	4th Asian Symposium on Information Display
Place	China
City	Hong Kong
Period	13/02/97 → 14/02/97

Access Output

10.1109/asid.1997.631401

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{d6a154d134f94b6ba6ec47653f11cf34,

title = "Interfacial effects on characteristics of a-Si TFT",

abstract = "The concept of effective density of interface states at a-SiNx:H/a-Si:H interface has been used to analyze the performance of a-Si TFT theoretically, such as field effect, flat band voltage, subthreshold characteristics, as well as experimental research on a-Si TFT. The transfer characteristics of various a-Si TFT and the sub-threshold characteristic parameter S, with different fabrication conditions, have verified the conclusions drawn up from the theoretical analysis in this paper.",

author = "X. Zou and Webb, {D. P.} and Chan, {Y. C.} and Lam, {Y. W.} and Z. Xu",

year = "1997",

month = feb,

doi = "10.1109/asid.1997.631401",

language = "English",

isbn = "962-8273-01-9",

pages = "69--72",

booktitle = "Proceedings of the Fourth Asian Symposium on Information Display",

publisher = "IEEE",

address = "United States",

note = "4th Asian Symposium on Information Display ; Conference date: 13-02-1997 Through 14-02-1997",

}

TY - GEN

T1 - Interfacial effects on characteristics of a-Si TFT

AU - Zou, X.

AU - Webb, D. P.

AU - Chan, Y. C.

AU - Lam, Y. W.

AU - Xu, Z.

PY - 1997/2

Y1 - 1997/2

N2 - The concept of effective density of interface states at a-SiNx:H/a-Si:H interface has been used to analyze the performance of a-Si TFT theoretically, such as field effect, flat band voltage, subthreshold characteristics, as well as experimental research on a-Si TFT. The transfer characteristics of various a-Si TFT and the sub-threshold characteristic parameter S, with different fabrication conditions, have verified the conclusions drawn up from the theoretical analysis in this paper.

AB - The concept of effective density of interface states at a-SiNx:H/a-Si:H interface has been used to analyze the performance of a-Si TFT theoretically, such as field effect, flat band voltage, subthreshold characteristics, as well as experimental research on a-Si TFT. The transfer characteristics of various a-Si TFT and the sub-threshold characteristic parameter S, with different fabrication conditions, have verified the conclusions drawn up from the theoretical analysis in this paper.

UR - http://www.scopus.com/inward/record.url?scp=0030706427&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0030706427&origin=recordpage

U2 - 10.1109/asid.1997.631401

DO - 10.1109/asid.1997.631401

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 962-8273-01-9

SP - 69

EP - 72

BT - Proceedings of the Fourth Asian Symposium on Information Display

PB - IEEE

T2 - 4th Asian Symposium on Information Display

Y2 - 13 February 1997 through 14 February 1997

ER -

Interfacial effects on characteristics of a-Si TFT

Abstract

Conference

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this