TY - JOUR
T1 - Interfacial charge-transfer effects in semiconductor-molecule-metal structures
T2 - Influence of contact variation
AU - Mao, Zhu
AU - Song, Wei
AU - Xue, Xiangxin
AU - Ji, Wei
AU - Li, Zhishi
AU - Chen, Lei
AU - Mao, Huijuan
AU - Lv, Haiming
AU - Wang, Xu
AU - Lombardi, John R.
AU - Zhao, Bing
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to <a href="mailto:[email protected]">[email protected]</a>.
PY - 2012/7/12
Y1 - 2012/7/12
N2 - The charge-transfer resonance of Raman measurements in nanosized semiconductor-molecule-metal interfaces as a function of the excitation energy with four models (Cu-ZnO-PATP-Ag, Cu-Ag-PATP-ZnO, Cu-ZnO-Ag-PATP, and Cu-Ag-ZnO-PATP assemblies) to describe this dependence provides a powerful tool to study the chemical mechanism of surface enhanced Raman scattering (SERS). We measured the SERS spectra of self-assembled p-aminothiophenol (PATP) molecule junctions at 488, 514, 633, and 785 nm excitation wavelengths. We followed changes at the molecule junctions during the conditioning and eventually effect of charge-transfer (CT) through molecule-ZnO interfaces. Our results demonstrate that the interaction between the semiconductor bands and molecular energy levels can lead to novel charge behavior. The typical ZnO-PATP interfacial electron-hole recombination causes an increase in the CT resonance enhancement of Raman scattering, which is mainly responsible for the drastic change in molecular polarizability. We also proposed a complementary interpretation of the mechanism responsible for the highly variable enhancement observed in SERS. © 2012 American Chemical Society.
AB - The charge-transfer resonance of Raman measurements in nanosized semiconductor-molecule-metal interfaces as a function of the excitation energy with four models (Cu-ZnO-PATP-Ag, Cu-Ag-PATP-ZnO, Cu-ZnO-Ag-PATP, and Cu-Ag-ZnO-PATP assemblies) to describe this dependence provides a powerful tool to study the chemical mechanism of surface enhanced Raman scattering (SERS). We measured the SERS spectra of self-assembled p-aminothiophenol (PATP) molecule junctions at 488, 514, 633, and 785 nm excitation wavelengths. We followed changes at the molecule junctions during the conditioning and eventually effect of charge-transfer (CT) through molecule-ZnO interfaces. Our results demonstrate that the interaction between the semiconductor bands and molecular energy levels can lead to novel charge behavior. The typical ZnO-PATP interfacial electron-hole recombination causes an increase in the CT resonance enhancement of Raman scattering, which is mainly responsible for the drastic change in molecular polarizability. We also proposed a complementary interpretation of the mechanism responsible for the highly variable enhancement observed in SERS. © 2012 American Chemical Society.
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U2 - 10.1021/jp304051r
DO - 10.1021/jp304051r
M3 - RGC 21 - Publication in refereed journal
SN - 1932-7447
VL - 116
SP - 14701
EP - 14710
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 27
ER -