Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Kuei-Chang Lai
  • Pei-Yu Wu
  • Chih-Ming Chen
  • Tzu-Chien Wei
  • Chung-Han Wu

Detail(s)

Original languageEnglish
Pages (from-to)4813-4822
Journal / PublicationJournal of Electronic Materials
Volume45
Issue number10
Publication statusPublished - 1 Oct 2016
Externally publishedYes

Abstract

Front-side metallization of a Si wafer was carried out using electroless deposition of nickel-phosphorus (Ni-P) catalyzed by polyvinylpyrrolidone-capped palladium nanoclusters (PVP-nPd). A 3-[2-(2-Aminoethylamino)ethylamino] propyl-trimethoxysilane (ETAS) layer was covalently bonded on the Si surface as bridge linker to the Pd cores of PVP-nPd clusters for improving adhesion between the Ni-P layer and the Si surface. To investigate the effects of an interfacial ETAS layer on the Ni silicide formation at the Ni-P/Si contact, the Ni-P-coated Si samples were thermally annealed via rapid thermal annealing (RTA) from 500°C to 900°C for 2 min. To compare with the ETAS sample, the sputtered Ni layer on Si and electroless Ni-P layer on ion-Pd-catalyzed Si (both are standard processes) were also investigated. The microstructural characterizations for the Ni-P or Ni layer deposited on the Si wafer were performed using x-ray diffractometer, scanning electron microscopy, and transmission electron microscopy. Our results showed that the ETAS layer acted as a barrier to slow the atomic diffusion of Ni toward the Si side. Although the formation of Ni silicides required a higher annealing temperature, the adhesion strength and contact resistivity measurements of annealed Ni-P/Si contacts showed satisfactory results, which were essential to the device performance and reliability during thermal annealing.

Research Area(s)

  • Annealing, diffusion, electroless, microstructures, nickel

Bibliographic Note

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Citation Format(s)

Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing. / Lai, Kuei-Chang; Wu, Pei-Yu; Chen, Chih-Ming et al.
In: Journal of Electronic Materials, Vol. 45, No. 10, 01.10.2016, p. 4813-4822.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review