Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation

Zengfeng Di; Miao Zhang; Weili Liu; Suhua Luo; Zhitang Song; Chenglu Lin; Qing Lin; Paul K. Chu

doi:10.1088/0268-1242/20/8/L02

Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation

Zengfeng Di
, Miao Zhang
, Weili Liu
, Suhua Luo
, Zhitang Song
, Chenglu Lin
, Qing Lin
, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

A fully depleted SiGe-on-insulator (SGOI) substrate has been fabricated by a modified Ge condensation technique. The characteristics of the SiGe/buried-oxide (BOX) interface and the influence on the electrical performance of the SGOI substrate are investigated. The long oxidation time during the fabrication of the fully depleted (FD) SGOI substrate leads to Ge atom pileup at the SiGe/BOX interface, and consequently a large number of interfacial trapped charges are produced. Furthermore, our results disclose that Ge diffusion into the BOX increases the interfacial trapped charges and the fixed oxide charges during oxidation. As a result, the electrical properties of the FD-SGOI substrate degrade due to the poor SiGe/BOX interface. © 2005 IOP Publishing Ltd.

Original language	English
Journal	Semiconductor Science and Technology
Volume	20
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/20/8/L02
Publication status	Published - 1 Aug 2005

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@article{bde63bb04cd44fcfbd783f78931f4088,

title = "Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation",

abstract = "A fully depleted SiGe-on-insulator (SGOI) substrate has been fabricated by a modified Ge condensation technique. The characteristics of the SiGe/buried-oxide (BOX) interface and the influence on the electrical performance of the SGOI substrate are investigated. The long oxidation time during the fabrication of the fully depleted (FD) SGOI substrate leads to Ge atom pileup at the SiGe/BOX interface, and consequently a large number of interfacial trapped charges are produced. Furthermore, our results disclose that Ge diffusion into the BOX increases the interfacial trapped charges and the fixed oxide charges during oxidation. As a result, the electrical properties of the FD-SGOI substrate degrade due to the poor SiGe/BOX interface. {\textcopyright} 2005 IOP Publishing Ltd.",

author = "Zengfeng Di and Miao Zhang and Weili Liu and Suhua Luo and Zhitang Song and Chenglu Lin and Qing Lin and Chu, \{Paul K.\}",

year = "2005",

month = aug,

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doi = "10.1088/0268-1242/20/8/L02",

language = "English",

volume = "20",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

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TY - JOUR

T1 - Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation

AU - Di, Zengfeng

AU - Zhang, Miao

AU - Liu, Weili

AU - Luo, Suhua

AU - Song, Zhitang

AU - Lin, Chenglu

AU - Lin, Qing

AU - Chu, Paul K.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - A fully depleted SiGe-on-insulator (SGOI) substrate has been fabricated by a modified Ge condensation technique. The characteristics of the SiGe/buried-oxide (BOX) interface and the influence on the electrical performance of the SGOI substrate are investigated. The long oxidation time during the fabrication of the fully depleted (FD) SGOI substrate leads to Ge atom pileup at the SiGe/BOX interface, and consequently a large number of interfacial trapped charges are produced. Furthermore, our results disclose that Ge diffusion into the BOX increases the interfacial trapped charges and the fixed oxide charges during oxidation. As a result, the electrical properties of the FD-SGOI substrate degrade due to the poor SiGe/BOX interface. © 2005 IOP Publishing Ltd.

AB - A fully depleted SiGe-on-insulator (SGOI) substrate has been fabricated by a modified Ge condensation technique. The characteristics of the SiGe/buried-oxide (BOX) interface and the influence on the electrical performance of the SGOI substrate are investigated. The long oxidation time during the fabrication of the fully depleted (FD) SGOI substrate leads to Ge atom pileup at the SiGe/BOX interface, and consequently a large number of interfacial trapped charges are produced. Furthermore, our results disclose that Ge diffusion into the BOX increases the interfacial trapped charges and the fixed oxide charges during oxidation. As a result, the electrical properties of the FD-SGOI substrate degrade due to the poor SiGe/BOX interface. © 2005 IOP Publishing Ltd.

UR - https://www.scopus.com/pages/publications/22944468213

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-22944468213&origin=recordpage

U2 - 10.1088/0268-1242/20/8/L02

DO - 10.1088/0268-1242/20/8/L02

M3 - RGC 21 - Publication in refereed journal

SN - 0268-1242

VL - 20

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation

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