Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator

Zengfeng Di; Miao Zhang; Weili Liu; Qinwo Shen; Suhua Luo; Zhitang Song; Chenglu Lin; Anping Huang; Paul K. Chu

doi:10.1063/1.1957109

Interfacial and electrical characteristics of Al₂O₃ gate dielectric on fully depleted SiGe on insulator

Zengfeng Di
, Miao Zhang
, Weili Liu
, Qinwo Shen
, Suhua Luo
, Zhitang Song
, Chenglu Lin
, Anping Huang
, Paul K. Chu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

8 Citations (Scopus)

Abstract

The interfacial and electrical characteristics of as-deposited or annealed A2 O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of Si Ox and Ge Ox is observed in the as-grown film. The interfacial silicate formation is effectively suppressed by Ge Ox formation. However, Ge Ox is reduced to Ge and extensive silicate formation occurs after annealing. The formation of silicate and disappearance of Ge Ox after annealing leads to a decrease in the density of the interfacial states. © 2005 American Institute of Physics.

Original language	English
Article number	262102
Pages (from-to)	1-3
Journal	Applied Physics Letters
Volume	86
Issue number	26
DOIs	https://doi.org/10.1063/1.1957109
Publication status	Published - 27 Jun 2005

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@article{8bc422574cfc4c7ea6f5ee89733b7ea2,

title = "Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator",

abstract = "The interfacial and electrical characteristics of as-deposited or annealed A2 O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of Si Ox and Ge Ox is observed in the as-grown film. The interfacial silicate formation is effectively suppressed by Ge Ox formation. However, Ge Ox is reduced to Ge and extensive silicate formation occurs after annealing. The formation of silicate and disappearance of Ge Ox after annealing leads to a decrease in the density of the interfacial states. {\textcopyright} 2005 American Institute of Physics.",

author = "Zengfeng Di and Miao Zhang and Weili Liu and Qinwo Shen and Suhua Luo and Zhitang Song and Chenglu Lin and Anping Huang and Chu, \{Paul K.\}",

year = "2005",

month = jun,

day = "27",

doi = "10.1063/1.1957109",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator

AU - Di, Zengfeng

AU - Zhang, Miao

AU - Liu, Weili

AU - Shen, Qinwo

AU - Luo, Suhua

AU - Song, Zhitang

AU - Lin, Chenglu

AU - Huang, Anping

AU - Chu, Paul K.

PY - 2005/6/27

Y1 - 2005/6/27

N2 - The interfacial and electrical characteristics of as-deposited or annealed A2 O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of Si Ox and Ge Ox is observed in the as-grown film. The interfacial silicate formation is effectively suppressed by Ge Ox formation. However, Ge Ox is reduced to Ge and extensive silicate formation occurs after annealing. The formation of silicate and disappearance of Ge Ox after annealing leads to a decrease in the density of the interfacial states. © 2005 American Institute of Physics.

AB - The interfacial and electrical characteristics of as-deposited or annealed A2 O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of Si Ox and Ge Ox is observed in the as-grown film. The interfacial silicate formation is effectively suppressed by Ge Ox formation. However, Ge Ox is reduced to Ge and extensive silicate formation occurs after annealing. The formation of silicate and disappearance of Ge Ox after annealing leads to a decrease in the density of the interfacial states. © 2005 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/22144447502

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-22144447502&origin=recordpage

U2 - 10.1063/1.1957109

DO - 10.1063/1.1957109

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262102

ER -