Interface structure of ultrathin oxide prepared by N2O oxidation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Hei Wong
  • Vincent M.C. Poon
  • C. W. Kok
  • P. J. Chan
  • V. A. Gritsenko

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)1941-1945
Journal / PublicationIEEE Transactions on Electron Devices
Volume50
Issue number9
Publication statusPublished - Sep 2003

Abstract

With X-ray photoelectron spectroscopy (XPS) measurements, we found in the N2O-grown oxide that the nitrogen incorporation should involve the NO or N reaction with the Si-Si bond and Pb at the interface. Consequently, nitrogen content is very low and accumulated mainly at the interface. In addition, we found that the nitrogen atoms at the interface exist in the form of Si-N bonding and the interface oxynitride layer is a mixture of SiO2 and Si3 N4 clusters. This structure will result in several undesirable effects. It will give rise to the permittivity and bandgap fluctuations at the interface and hence induced gigantic surface potential fluctuation and mobility degradation in the channel of MOS devices. This bonding structure also explains the interface trap generation during the electrical stressing. The sources of trap generation are attributed to the Si-Si bonds, Pb centers, and nitride-related defects due to the over-constrained silicon atoms in the Si3N4 clusters at the interface.

Research Area(s)

  • Dielectric film, Interface states, MOS devices, Ultrathin oxide reliability

Citation Format(s)

Interface structure of ultrathin oxide prepared by N2O oxidation. / Wong, Hei; Poon, Vincent M.C.; Kok, C. W.; Chan, P. J.; Gritsenko, V. A.

In: IEEE Transactions on Electron Devices, Vol. 50, No. 9, 09.2003, p. 1941-1945.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review