Interface structure of sputter deposited CNx film on silicon substrate
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 2685-2687 |
| Journal / Publication | Materials Letters |
| Volume | 62 |
| Issue number | 17-18 |
| Publication status | Published - 30 Jun 2008 |
Link(s)
Abstract
Amorphous carbon nitride (CNx, x = 0.05) films were reactively sputtered on Si(100) substrate, and the interface structure was studied by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). In cross-sectional TEM a gray interlayer about 5 nm thick between the bulk CNx film and silicon substrate is observed, and the interface is dense. A little Si impurity (<1 at.%) is revealed in the films deposited for short time (7 s and 17 s) by XPS measurement. The in-depth XPS analyses indicate that there exists an interlayer with Si impurity above, and a sub-surface layer with C and N below the original surface of silicon substrate. The two layers have different chemical composition and bonding state. © 2008 Elsevier B.V. All rights reserved.
Research Area(s)
- Carbon nitride, Microstructure, Sputtering, Thin films
Citation Format(s)
Interface structure of sputter deposited CNx film on silicon substrate. / Fu, T.; Zheng, Y.; Shen, Y. G.
In: Materials Letters, Vol. 62, No. 17-18, 30.06.2008, p. 2685-2687.
In: Materials Letters, Vol. 62, No. 17-18, 30.06.2008, p. 2685-2687.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
