Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Detail(s)

Original languageEnglish
Pages (from-to)709-711
Journal / PublicationApplied Physics Letters
Volume40
Issue number8
Publication statusPublished - 1982
Externally publishedYes

Abstract

We observe the generation of interface states in the Si-SiO2 system when electrons are internally photoinjected from an Al field plate and are swept through the oxide by a moderate electric field. Interface states appear immediately at 90 K. The rate of interface state generation caused by photoinjected electrons depends on the oxide thickness and the magnitude of the bias field. The generated interface state density is found to increase as N ss = AQs, where Q is the injected charge and s is generally in the range 0.5-0.7. The generation does not saturate after passage of a total charge of 0.35 C/cm2.