Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene

Xiaohu Zheng; Miao Zhang; Xiaohua Shi; Gang Wang; Li Zheng; Yuehui Yu; Anping Huang; Paul K. Chu; Heng Gao; Wei Ren; Zengfeng Di; Xi Wang

doi:10.1109/EDTM.2018.8421439

Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene

Xiaohu Zheng, Miao Zhang, Xiaohua Shi, Gang Wang, Li Zheng, Yuehui Yu, Anping Huang, Paul K. Chu, Heng Gao, Wei Ren, Zengfeng Di^*, Xi Wang

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Ge is a promising candidate to replace Si in future low-power logic applications. However, the unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics. We discover the insulating fluorinated graphene can be employed as an efficient diffusion barrier layer to suppress the formation of the unstable interfacial oxide in Ge-based devices. The Ge-based device with the fluorinated graphene exhibits negligible capacitance versus voltage hysteresis, extremely low leakage, and superior equivalent oxide thickness.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Proceedings
Publisher	IEEE
Pages	202-204
ISBN (Electronic)	9781538637111
ISBN (Print)	9781538637128
DOIs	https://doi.org/10.1109/EDTM.2018.8421439
Publication status	Published - Mar 2018
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: 13 Mar 2018 → 16 Mar 2018

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Abbreviated title	EDTM 2018
Place	Japan
City	Kobe
Period	13/03/18 → 16/03/18

Research Keywords

Fluorinated graphene
Germanium
High-k dielectric
Metal-Oxide-Semiconductor

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10.1109/EDTM.2018.8421439

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Zheng, X., Zhang, M., Shi, X., Wang, G., Zheng, L., Yu, Y., Huang, A., Chu, P. K., Gao, H., Ren, W., Di, Z., & Wang, X. (2018). Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene. In 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Proceedings (pp. 202-204). Article 8421439 IEEE. https://doi.org/10.1109/EDTM.2018.8421439

@inproceedings{ced0092811314deab3a913fbb94403e5,

title = "Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene",

abstract = "Ge is a promising candidate to replace Si in future low-power logic applications. However, the unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics. We discover the insulating fluorinated graphene can be employed as an efficient diffusion barrier layer to suppress the formation of the unstable interfacial oxide in Ge-based devices. The Ge-based device with the fluorinated graphene exhibits negligible capacitance versus voltage hysteresis, extremely low leakage, and superior equivalent oxide thickness.",

keywords = "Fluorinated graphene, Germanium, High-k dielectric, Metal-Oxide-Semiconductor",

author = "Xiaohu Zheng and Miao Zhang and Xiaohua Shi and Gang Wang and Li Zheng and Yuehui Yu and Anping Huang and Chu, {Paul K.} and Heng Gao and Wei Ren and Zengfeng Di and Xi Wang",

year = "2018",

month = mar,

doi = "10.1109/EDTM.2018.8421439",

language = "English",

isbn = "9781538637128",

pages = "202--204",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Proceedings",

publisher = "IEEE",

address = "United States",

note = "2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

}

Zheng, X, Zhang, M, Shi, X, Wang, G, Zheng, L, Yu, Y, Huang, A, Chu, PK, Gao, H, Ren, W, Di, Z & Wang, X 2018, Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene. in 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Proceedings., 8421439, IEEE, pp. 202-204, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 13/03/18. https://doi.org/10.1109/EDTM.2018.8421439

Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene. / Zheng, Xiaohu; Zhang, Miao; Shi, Xiaohua et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Proceedings. IEEE, 2018. p. 202-204 8421439.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene

AU - Zheng, Xiaohu

AU - Zhang, Miao

AU - Shi, Xiaohua

AU - Wang, Gang

AU - Zheng, Li

AU - Yu, Yuehui

AU - Huang, Anping

AU - Chu, Paul K.

AU - Gao, Heng

AU - Ren, Wei

AU - Di, Zengfeng

AU - Wang, Xi

PY - 2018/3

Y1 - 2018/3

N2 - Ge is a promising candidate to replace Si in future low-power logic applications. However, the unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics. We discover the insulating fluorinated graphene can be employed as an efficient diffusion barrier layer to suppress the formation of the unstable interfacial oxide in Ge-based devices. The Ge-based device with the fluorinated graphene exhibits negligible capacitance versus voltage hysteresis, extremely low leakage, and superior equivalent oxide thickness.

AB - Ge is a promising candidate to replace Si in future low-power logic applications. However, the unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics. We discover the insulating fluorinated graphene can be employed as an efficient diffusion barrier layer to suppress the formation of the unstable interfacial oxide in Ge-based devices. The Ge-based device with the fluorinated graphene exhibits negligible capacitance versus voltage hysteresis, extremely low leakage, and superior equivalent oxide thickness.

KW - Fluorinated graphene

KW - Germanium

KW - High-k dielectric

KW - Metal-Oxide-Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=85051456201&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85051456201&origin=recordpage

U2 - 10.1109/EDTM.2018.8421439

DO - 10.1109/EDTM.2018.8421439

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781538637128

SP - 202

EP - 204

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Proceedings

PB - IEEE

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene

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