Interface dipole engineering in metal gate/high-k stacks

AnPing Huang; XiaoHu Zheng; ZhiSong Xiao; Mei Wang; ZengFeng Di; Paul K. Chu

doi:10.1007/s11434-012-5289-6

Interface dipole engineering in metal gate/high-k stacks

AnPing Huang, XiaoHu Zheng, ZhiSong Xiao, Mei Wang, ZengFeng Di, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

24 Citations (Scopus)

225 Downloads (CityUHK Scholars)

Abstract

Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to tackle these problems, interface dipole engineering (IDE) is an effective method to improve the performance, particularly, modulating the effective work function (EWF) of metal gates. Because of the different electronegativity of the various atoms in the interfacial layer, a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack. This paper reviews the interface dipole formation induced by different elements, recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation, and mechanism of IDE. © 2012 The Author(s).

Original language	English
Pages (from-to)	2872-2878
Journal	Chinese Science Bulletin
Volume	57
Issue number	22
DOIs	https://doi.org/10.1007/s11434-012-5289-6
Publication status	Published - Aug 2012

Research Keywords

effective work function
high-k dielectrics
interface dipole
metal gate
MOS stack

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@article{fcc632c3cc744f6bb42475c4da527cac,

title = "Interface dipole engineering in metal gate/high-k stacks",

abstract = "Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to tackle these problems, interface dipole engineering (IDE) is an effective method to improve the performance, particularly, modulating the effective work function (EWF) of metal gates. Because of the different electronegativity of the various atoms in the interfacial layer, a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack. This paper reviews the interface dipole formation induced by different elements, recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation, and mechanism of IDE. {\textcopyright} 2012 The Author(s).",

keywords = "effective work function, high-k dielectrics, interface dipole, metal gate, MOS stack",

author = "AnPing Huang and XiaoHu Zheng and ZhiSong Xiao and Mei Wang and ZengFeng Di and Chu, {Paul K.}",

year = "2012",

month = aug,

doi = "10.1007/s11434-012-5289-6",

language = "English",

volume = "57",

pages = "2872--2878",

journal = "Chinese Science Bulletin",

issn = "1001-6538",

publisher = "Elsevier B.V.",

number = "22",

}

TY - JOUR

T1 - Interface dipole engineering in metal gate/high-k stacks

AU - Huang, AnPing

AU - Zheng, XiaoHu

AU - Xiao, ZhiSong

AU - Wang, Mei

AU - Di, ZengFeng

AU - Chu, Paul K.

PY - 2012/8

Y1 - 2012/8

N2 - Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to tackle these problems, interface dipole engineering (IDE) is an effective method to improve the performance, particularly, modulating the effective work function (EWF) of metal gates. Because of the different electronegativity of the various atoms in the interfacial layer, a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack. This paper reviews the interface dipole formation induced by different elements, recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation, and mechanism of IDE. © 2012 The Author(s).

AB - Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to tackle these problems, interface dipole engineering (IDE) is an effective method to improve the performance, particularly, modulating the effective work function (EWF) of metal gates. Because of the different electronegativity of the various atoms in the interfacial layer, a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack. This paper reviews the interface dipole formation induced by different elements, recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation, and mechanism of IDE. © 2012 The Author(s).

KW - effective work function

KW - high-k dielectrics

KW - interface dipole

KW - metal gate

KW - MOS stack

UR - http://www.scopus.com/inward/record.url?scp=84865527502&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84865527502&origin=recordpage

U2 - 10.1007/s11434-012-5289-6

DO - 10.1007/s11434-012-5289-6

M3 - RGC 21 - Publication in refereed journal

SN - 1001-6538

VL - 57

SP - 2872

EP - 2878

JO - Chinese Science Bulletin

JF - Chinese Science Bulletin

IS - 22

ER -

Interface dipole engineering in metal gate/high-k stacks

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Research Keywords

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