@inproceedings{f568cdbda82a42099c6c17f06ab9a9e0,
title = "Interface characterization and internal electric field evaluation of a-Si: H pin solar cell by variable energy positron annihilation spectroscopy",
abstract = "By means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.",
author = "X. Zou and Chan, {Y. C.} and Webb, {D. P.} and Lam, {Y. W.} and Chan, {F. Y M} and Lin, {S. H.} and Hu, {Y. F.} and Beling, {C. D.} and S. Fung",
year = "1999",
month = apr,
doi = "10.1557/PROC-507-643",
language = "English",
volume = "507",
series = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",
pages = "643--648",
booktitle = "MRS Proceedings",
address = "United States",
note = "1998 MRS Spring Meeting ; Conference date: 14-04-1998 Through 17-04-1998",
}
