Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen

Hei Wong; K. L. Ng; Nian Zhan; M. C. Poon; C. W. Kok

doi:10.1116/1.1740764

Author(s)

Hei Wong
K. L. Ng
Nian Zhan
M. C. Poon
C. W. Kok

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Pages (from-to)	1094-1100
Journal / Publication	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
Publication status	Published - May 2004

Link(s)

DOI	DOI https://doi.org/10.1116/1.1740764 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-3242693485&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(e29a97a8-c1db-4583-a39b-c976800cff2a).html

Abstract

The direct sputtering of hafnium in oxygen was investigated for preparation of interface bonding structure of hafnium oxide. The starting material for the metal-insulator-semiconductor (MIS) capacitor fabrication is 100 n-type Si substrate with a resistivity in the range of 5-10 Ωcm. The ratio of oxygen and argon was 2:30 and remained unchanged during the sputtering. The results show that hafnium oxide/Si interface is thermally unstable, after thermal treatment at a temperature greater than 400°C.

Citation Format(s)

[ RIS ] [ BibTeX ]

Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen. / Wong, Hei; Ng, K. L.; Zhan, Nian et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 05.2004, p. 1094-1100.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Wong, H, Ng, KL, Zhan, N, Poon, MC & Kok, CW 2004, 'Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 3, pp. 1094-1100. https://doi.org/10.1116/1.1740764

Wong, H., Ng, K. L., Zhan, N., Poon, M. C., & Kok, C. W. (2004). Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(3), 1094-1100. https://doi.org/10.1116/1.1740764

Wong H, Ng KL, Zhan N, Poon MC, Kok CW. Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2004 May;22(3):1094-1100. doi: 10.1116/1.1740764

Wong, Hei ; Ng, K. L. ; Zhan, Nian et al. / Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2004 ; Vol. 22, No. 3. pp. 1094-1100.