Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen

Hei Wong; K. L. Ng; Nian Zhan; M. C. Poon; C. W. Kok

doi:10.1116/1.1740764

Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen

Hei Wong, K. L. Ng, Nian Zhan, M. C. Poon, C. W. Kok

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

66 Citations (Scopus)

Abstract

The direct sputtering of hafnium in oxygen was investigated for preparation of interface bonding structure of hafnium oxide. The starting material for the metal-insulator-semiconductor (MIS) capacitor fabrication is 100 n-type Si substrate with a resistivity in the range of 5-10 Ωcm. The ratio of oxygen and argon was 2:30 and remained unchanged during the sputtering. The results show that hafnium oxide/Si interface is thermally unstable, after thermal treatment at a temperature greater than 400°C.

Original language	English
Pages (from-to)	1094-1100
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1740764
Publication status	Published - May 2004

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title = "Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen",

abstract = "The direct sputtering of hafnium in oxygen was investigated for preparation of interface bonding structure of hafnium oxide. The starting material for the metal-insulator-semiconductor (MIS) capacitor fabrication is 100 n-type Si substrate with a resistivity in the range of 5-10 Ωcm. The ratio of oxygen and argon was 2:30 and remained unchanged during the sputtering. The results show that hafnium oxide/Si interface is thermally unstable, after thermal treatment at a temperature greater than 400°C.",

author = "Hei Wong and Ng, {K. L.} and Nian Zhan and Poon, {M. C.} and Kok, {C. W.}",

year = "2004",

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pages = "1094--1100",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "0734-211X",

publisher = "American Institute of Physics",

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Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen. / Wong, Hei; Ng, K. L.; Zhan, Nian et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 05.2004, p. 1094-1100.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen

AU - Wong, Hei

AU - Ng, K. L.

AU - Zhan, Nian

AU - Poon, M. C.

AU - Kok, C. W.

PY - 2004/5

Y1 - 2004/5

N2 - The direct sputtering of hafnium in oxygen was investigated for preparation of interface bonding structure of hafnium oxide. The starting material for the metal-insulator-semiconductor (MIS) capacitor fabrication is 100 n-type Si substrate with a resistivity in the range of 5-10 Ωcm. The ratio of oxygen and argon was 2:30 and remained unchanged during the sputtering. The results show that hafnium oxide/Si interface is thermally unstable, after thermal treatment at a temperature greater than 400°C.

AB - The direct sputtering of hafnium in oxygen was investigated for preparation of interface bonding structure of hafnium oxide. The starting material for the metal-insulator-semiconductor (MIS) capacitor fabrication is 100 n-type Si substrate with a resistivity in the range of 5-10 Ωcm. The ratio of oxygen and argon was 2:30 and remained unchanged during the sputtering. The results show that hafnium oxide/Si interface is thermally unstable, after thermal treatment at a temperature greater than 400°C.

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DO - 10.1116/1.1740764

M3 - RGC 21 - Publication in refereed journal

SN - 0734-211X

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SP - 1094

EP - 1100

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen

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