Interface and oxide traps in high-κ hafnium oxide films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

41 Scopus Citations
View graph of relations

Author(s)

  • H. Wong
  • N. Zhan
  • K. L. Ng
  • M. C. Poon
  • C. W. Kok

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)96-100
Journal / PublicationThin Solid Films
Volume462-463
Issue numberSPEC. ISS.
Publication statusPublished - Sep 2004

Abstract

The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO2/Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO2 films suggest that we may have to use the SiO2/HfO2 stack or hafnium silicate structure for better device performance. © 2004 Elsevier B.V. All rights reserved.

Research Area(s)

  • Bonding structure, Hafnium oxide, Interface trap

Citation Format(s)

Interface and oxide traps in high-κ hafnium oxide films. / Wong, H.; Zhan, N.; Ng, K. L.; Poon, M. C.; Kok, C. W.

In: Thin Solid Films, Vol. 462-463, No. SPEC. ISS., 09.2004, p. 96-100.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review