Interactions in the Co/Si thin-film system. I. Kinetics

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)4005-4010
Journal / PublicationJournal of Applied Physics
Volume49
Issue number7
Publication statusPublished - 1978
Externally publishedYes

Abstract

Interactions in the Co/Si thin-film system were investigated by MeV backscattering and x-ray-diffraction techniques. It was found that Si diffuses through the Co layer and accumulates at the sample surface at about 300 °C. Increasing the temperature causes the growth of the Co2Si phase, followed by the simultaneous growth of the CoSi phase. The growth rates for both phases have a square root of time dependence. The activation energies of growth are 1.5 and 1.9 eV for the Co2Si and CoSi phase, respectively. A model for the growth of multiple phases is suggested. The transformation between CoSi2 and CoSi is found to be a reversible reaction.

Bibliographic Note

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Citation Format(s)

Interactions in the Co/Si thin-film system. I. Kinetics. / Lau, S. S.; Mayer, J. W.; Tu, K. N.
In: Journal of Applied Physics, Vol. 49, No. 7, 1978, p. 4005-4010.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review