TY - JOUR
T1 - Interaction of a polycrystalline silicon/SiO2/silicon substrate under thermal/electrical fields
AU - Chou, T. C.
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1988
Y1 - 1988
N2 - Electric current induced breakdown phenomenon of silicon dioxide film was studied by annealing the sandwich samples of polycrystalline Si/SiO 2/Si substrate at 700 °C under electric currents. Cross-sectional transmission electron microscopy revealed two interesting results: (1) the aggregation of voids into large holes at the interface of polycrystalline Si/SiO2, and (2) the nucleation and growth of crystalline Si in the silicon dioxide layer. The crystalline Si was either of single crystalline or polycrystalline forms, depending on the nucleating interfaces. Local melting as a result of Joule heating was observed. The breakdown of the oxide is mainly attributed to the loss of oxide integrity as a result of heterogeneous Joule heating. The nucleation and growth of crystalline Si in the amorphous oxide layer suggest the direct decomposition of SiO2 during the oxide breakdown process.
AB - Electric current induced breakdown phenomenon of silicon dioxide film was studied by annealing the sandwich samples of polycrystalline Si/SiO 2/Si substrate at 700 °C under electric currents. Cross-sectional transmission electron microscopy revealed two interesting results: (1) the aggregation of voids into large holes at the interface of polycrystalline Si/SiO2, and (2) the nucleation and growth of crystalline Si in the silicon dioxide layer. The crystalline Si was either of single crystalline or polycrystalline forms, depending on the nucleating interfaces. Local melting as a result of Joule heating was observed. The breakdown of the oxide is mainly attributed to the loss of oxide integrity as a result of heterogeneous Joule heating. The nucleation and growth of crystalline Si in the amorphous oxide layer suggest the direct decomposition of SiO2 during the oxide breakdown process.
UR - http://www.scopus.com/inward/record.url?scp=36549097388&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-36549097388&origin=recordpage
U2 - 10.1063/1.99684
DO - 10.1063/1.99684
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 52
SP - 1317
EP - 1319
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
ER -