Interaction between chromium oxide and chromium silicide

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)258-259
Journal / PublicationJournal of Applied Physics
Volume54
Issue number1
Publication statusPublished - 1 Jan 1983
Externally publishedYes

Abstract

We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550 °C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.

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Citation Format(s)

Interaction between chromium oxide and chromium silicide. / Cros, A.; Pollak, R. A.; Tu, K. N.

In: Journal of Applied Physics, Vol. 54, No. 1, 01.01.1983, p. 258-259.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review