Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang; Songlin Li; Xuming Zou; Johnny Ho; Lei Liao; Xiangheng Xiao; Changzhong Jiang; Weida Hu; Jianlu Wang; Jinchai Li

doi:10.1002/smll.201501260

Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang, Songlin Li, Xuming Zou, Johnny Ho, Lei Liao^*, Xiangheng Xiao, Changzhong Jiang, Weida Hu, Jianlu Wang, Jinchai Li

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

91 Citations (Scopus)

Abstract

A top-gated MoS₂ transistor with 6 nm thick HfO₂ is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO₂ is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO₂, and multilayered samples are less susceptible than monolayer ones.

Original language	English
Pages (from-to)	5932-5938
Journal	Small
Volume	11
Issue number	44
Online published	1 Oct 2015
DOIs	https://doi.org/10.1002/smll.201501260
Publication status	Published - 25 Nov 2015

Research Keywords

MoS2 transistors
scattering
thickness dependence
top gated, ozone pretreatments, transistors

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10.1002/smll.201501260

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title = "Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation",

abstract = "A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.",

keywords = "MoS2 transistors, scattering, thickness dependence, top gated, ozone pretreatments, transistors",

author = "Jingli Wang and Songlin Li and Xuming Zou and Johnny Ho and Lei Liao and Xiangheng Xiao and Changzhong Jiang and Weida Hu and Jianlu Wang and Jinchai Li",

year = "2015",

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day = "25",

doi = "10.1002/smll.201501260",

language = "English",

volume = "11",

pages = "5932--5938",

journal = "Small",

issn = "1613-6810",

publisher = "Wiley-VCH Verlag GmbH",

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Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. / Wang, Jingli; Li, Songlin; Zou, Xuming et al.
In: Small, Vol. 11, No. 44, 25.11.2015, p. 5932-5938.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

AU - Wang, Jingli

AU - Li, Songlin

AU - Zou, Xuming

AU - Ho, Johnny

AU - Liao, Lei

AU - Xiao, Xiangheng

AU - Jiang, Changzhong

AU - Hu, Weida

AU - Wang, Jianlu

AU - Li, Jinchai

PY - 2015/11/25

Y1 - 2015/11/25

N2 - A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

AB - A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

KW - MoS2 transistors

KW - scattering

KW - thickness dependence

KW - top gated, ozone pretreatments, transistors

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U2 - 10.1002/smll.201501260

DO - 10.1002/smll.201501260

M3 - RGC 21 - Publication in refereed journal

SN - 1613-6810

VL - 11

SP - 5932

EP - 5938

JO - Small

JF - Small

IS - 44

ER -