Instrumental and process considerations for the fabrication of silicon-on-insulators (SOI) structures by plasma immersion ion implantation

Plasma immersion ion implantation (PHI) has recently been shown to be a viable method to fabricate silicon-oninsulator (SOI) materials using either the SPIMOX (separation by plasma implantation of oxygen) or the ion cut/wafer bonding method. We have recently modified and characterized a new generation plasma immersion ion implanter for SOI fabrication, and this paper will discuss some of the instrumental and processing issues, including the plasma source, mean free path consideration, and dc sheath characteristics. © 1998 IEEE.