TY - JOUR
T1 - Instrumental and process considerations for the fabrication of silicon-on-insulators (SOI) structures by plasma immersion ion implantation
AU - Chu, Paul K.
AU - Qin, Shu
AU - Chan, Chung
AU - Cheung, Nathan W.
AU - Ko, Ping K.
PY - 1998
Y1 - 1998
N2 - Plasma immersion ion implantation (PHI) has recently been shown to be a viable method to fabricate silicon-oninsulator (SOI) materials using either the SPIMOX (separation by plasma implantation of oxygen) or the ion cut/wafer bonding method. We have recently modified and characterized a new generation plasma immersion ion implanter for SOI fabrication, and this paper will discuss some of the instrumental and processing issues, including the plasma source, mean free path consideration, and dc sheath characteristics. © 1998 IEEE.
AB - Plasma immersion ion implantation (PHI) has recently been shown to be a viable method to fabricate silicon-oninsulator (SOI) materials using either the SPIMOX (separation by plasma implantation of oxygen) or the ion cut/wafer bonding method. We have recently modified and characterized a new generation plasma immersion ion implanter for SOI fabrication, and this paper will discuss some of the instrumental and processing issues, including the plasma source, mean free path consideration, and dc sheath characteristics. © 1998 IEEE.
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U2 - 10.1109/27.659535
DO - 10.1109/27.659535
M3 - RGC 21 - Publication in refereed journal
SN - 0093-3813
VL - 26
SP - 79
EP - 84
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 1
ER -