In-situ phosphrous doping in ZnTe nanowires with enhanced p-type conductivity

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Y. L. Cao
  • Z. T. Liu
  • L. M. Chen
  • Y. B. Tang
  • L. B. Luo
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)2353-2359
Journal / PublicationJournal of Nanoscience and Nanotechnology
Volume12
Issue number3
Publication statusPublished - 2012

Abstract

Single-crystalline undoped and phosphrous-doped (P-doped) p-type ZnTe nanowires (NWs) were synthesized via a simple vapor transport and deposition method. Both undoped and P-doped ZnTe nanowires have zinc blende structure and uniform geometry. X-ray diffraction peaks of the P-doped ZnTe nanowires show an obvious shift toward higher diffraction angle as compared with the undoped ZnTe nanowires. X-ray photoelectron spectroscopy confirms the existence of P-dopant in the ZnTe nanowires. Field-effect transistors based on both undoped and P-doped ZnTe nanowires were fabricated and characterized. Electrical measurements demonstrated that P-doping led to an enhancement in p-type conductivity of ZnTe nanowires. A defect reaction mechanism was proposed to explain the p-type behaviors of both undoped and P-doped ZnTe nanowires. Copyright © 2012 American Scientific Publishers.

Research Area(s)

  • Doping, Electrical properties, Nanowires, Phosphrous, Photoluminescence, ZnTe

Citation Format(s)

In-situ phosphrous doping in ZnTe nanowires with enhanced p-type conductivity. / Cao, Y. L.; Liu, Z. T.; Chen, L. M.; Tang, Y. B.; Luo, L. B.; Lee, S. T.; Lee, C. S.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 3, 2012, p. 2353-2359.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review