In-situ fiberoptic thermometry measurements of wafer temperature during plasma etching using an electron cyclotron resonance source

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)75-80
Journal / PublicationMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1996
Externally publishedYes


Title1995 MRS Fall Meeting
PlaceUnited States
Period27 November - 1 December 1995


The increase in wafer temperature due to plasma heating during etching of Si and InP has been studied. Si and InP were etched using a high ion density discharge generated by an electron cyclotron resonance source. The wafer temperature was measured in-situ using fiberoptic thermometry as microwave power, rf power, chamber pressure, and gas flow were varied. Measurement of these parameters enabled the determination of their effects on wafer heating. On one hand, the effect on the water temperature was determined by studying the control temperature of the stage temperature using liquid N2 and backside He cooling.