In-situ electrical resistance measurement for determining minimum continuous thickness of Sn films by DC magnetron sputtering

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Se-Hun Kwon
  • Na-Hyun Kwon
  • Pung-Keun Song
  • Kwun Nam Hui
  • Kwan-San Hui
  • And 1 others
  • Young-Rae Cho

Detail(s)

Original languageEnglish
Pages (from-to)62-64
Journal / PublicationMaterials Letters
Volume73
Publication statusPublished - 15 Apr 2012

Abstract

Sn thin films were grown by DC magnetron sputtering on a soda-lime glass and Si substrate. The in-situ electrical resistance of the films was measured during the film growth. The minimum continuous thickness of the films was difficult to determine by using the conventional plot of R × d 2 versus d and could only be approximately calculated to be near 20 to 25 nm. On the other hand, a new empirical method using the plot of R × d 3 versus d gave a value of 16 nm for the minimum continuous Sn film thickness. The minimum continuous thickness of Sn films obtained from field-emission scanning electron microscopy and X-ray photoemission spectroscopy analyses was 16 nm. The new empirical method proposed here has the potential to determine the exact minimum continuous thickness of the films. © 2011 Elsevier B.V. All rights reserved.

Research Area(s)

  • Crystal growth, Electronic materials, Nanomaterials, Sputtering, Thin films

Citation Format(s)

In-situ electrical resistance measurement for determining minimum continuous thickness of Sn films by DC magnetron sputtering. / Kwon, Se-Hun; Kwon, Na-Hyun; Song, Pung-Keun; Hui, Kwun Nam; Hui, Kwan-San; Cho, Young-Rae.

In: Materials Letters, Vol. 73, 15.04.2012, p. 62-64.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review