InGaN/Si heterojunction tandem solar cells

J. W. Ager; L. A. Reichertz; K. M. Yu; W. J. Schaff; T. L. Williamson; M. A. Hoffbauer; N. M. Haegel; W. Walukiewicz

doi:10.1109/PVSC.2008.4922663

InGaN/Si heterojunction tandem solar cells

J. W. Ager
, L. A. Reichertz
, K. M. Yu
, W. J. Schaff
, T. L. Williamson
, M. A. Hoffbauer
, N. M. Haegel
, W. Walukiewicz

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

10 Citations (Scopus)

Abstract

Tandem solar cells using InxGa1-xN heterojunctions with silicon as the active junction were fabricated using gas-source molecular beam epitaxy (MBE) and by a novel deposition method incorporating an energetic nitrogen atom source. N-type InGaN layers were grown on p-Si(111) to evaluate predicted low-resistance tunnel junction properties. Ohmic behavior was observed, showing that these junctions can be used to connect the two pn subcells of an InGaN/Si tandem without the requirement of the heavily doped layers used in current multijunction cells. Undoped and Mg-doped films were grown by MBE on n-Si(111) using a AlN buffer layer. Depletion is observed on the Si side of the junction and efficiencies approaching 5% were measured for this 'hybrid' cell design. Conditions for achieving depletion on the p-InGaN and producing a 'single-junction' tandem cell are discussed. © 2008 IEEE.

Original language	English
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
DOIs	https://doi.org/10.1109/PVSC.2008.4922663
Publication status	Published - 2008
Externally published	Yes
Event	33rd IEEE Photovoltaic Specialists Conference (PVSC 2008) - Manchester Grand Hyatt, San Diego, CA, United States Duration: 11 May 2008 → 16 May 2008

Publication series

Name
ISSN (Print)	0160-8371

Conference

Conference	33rd IEEE Photovoltaic Specialists Conference (PVSC 2008)
Place	United States
City	San Diego, CA
Period	11/05/08 → 16/05/08

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SDG 7 Affordable and Clean Energy

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10.1109/PVSC.2008.4922663

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@inproceedings{644ad30f2798452d9b5d0b6c39daa64a,

title = "InGaN/Si heterojunction tandem solar cells",

abstract = "Tandem solar cells using InxGa1-xN heterojunctions with silicon as the active junction were fabricated using gas-source molecular beam epitaxy (MBE) and by a novel deposition method incorporating an energetic nitrogen atom source. N-type InGaN layers were grown on p-Si(111) to evaluate predicted low-resistance tunnel junction properties. Ohmic behavior was observed, showing that these junctions can be used to connect the two pn subcells of an InGaN/Si tandem without the requirement of the heavily doped layers used in current multijunction cells. Undoped and Mg-doped films were grown by MBE on n-Si(111) using a AlN buffer layer. Depletion is observed on the Si side of the junction and efficiencies approaching 5\% were measured for this 'hybrid' cell design. Conditions for achieving depletion on the p-InGaN and producing a 'single-junction' tandem cell are discussed. {\textcopyright} 2008 IEEE.",

author = "Ager, \{J. W.\} and Reichertz, \{L. A.\} and Yu, \{K. M.\} and Schaff, \{W. J.\} and Williamson, \{T. L.\} and Hoffbauer, \{M. A.\} and Haegel, \{N. M.\} and W. Walukiewicz",

year = "2008",

doi = "10.1109/PVSC.2008.4922663",

language = "English",

isbn = "9781424416417",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

note = "33rd IEEE Photovoltaic Specialists Conference (PVSC 2008) ; Conference date: 11-05-2008 Through 16-05-2008",

}

Ager, JW, Reichertz, LA, Yu, KM, Schaff, WJ, Williamson, TL, Hoffbauer, MA, Haegel, NM & Walukiewicz, W 2008, InGaN/Si heterojunction tandem solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 4922663, 33rd IEEE Photovoltaic Specialists Conference (PVSC 2008), San Diego, CA, United States, 11/05/08. https://doi.org/10.1109/PVSC.2008.4922663

TY - GEN

T1 - InGaN/Si heterojunction tandem solar cells

AU - Ager, J. W.

AU - Reichertz, L. A.

AU - Yu, K. M.

AU - Schaff, W. J.

AU - Williamson, T. L.

AU - Hoffbauer, M. A.

AU - Haegel, N. M.

AU - Walukiewicz, W.

PY - 2008

Y1 - 2008

N2 - Tandem solar cells using InxGa1-xN heterojunctions with silicon as the active junction were fabricated using gas-source molecular beam epitaxy (MBE) and by a novel deposition method incorporating an energetic nitrogen atom source. N-type InGaN layers were grown on p-Si(111) to evaluate predicted low-resistance tunnel junction properties. Ohmic behavior was observed, showing that these junctions can be used to connect the two pn subcells of an InGaN/Si tandem without the requirement of the heavily doped layers used in current multijunction cells. Undoped and Mg-doped films were grown by MBE on n-Si(111) using a AlN buffer layer. Depletion is observed on the Si side of the junction and efficiencies approaching 5% were measured for this 'hybrid' cell design. Conditions for achieving depletion on the p-InGaN and producing a 'single-junction' tandem cell are discussed. © 2008 IEEE.

AB - Tandem solar cells using InxGa1-xN heterojunctions with silicon as the active junction were fabricated using gas-source molecular beam epitaxy (MBE) and by a novel deposition method incorporating an energetic nitrogen atom source. N-type InGaN layers were grown on p-Si(111) to evaluate predicted low-resistance tunnel junction properties. Ohmic behavior was observed, showing that these junctions can be used to connect the two pn subcells of an InGaN/Si tandem without the requirement of the heavily doped layers used in current multijunction cells. Undoped and Mg-doped films were grown by MBE on n-Si(111) using a AlN buffer layer. Depletion is observed on the Si side of the junction and efficiencies approaching 5% were measured for this 'hybrid' cell design. Conditions for achieving depletion on the p-InGaN and producing a 'single-junction' tandem cell are discussed. © 2008 IEEE.

UR - https://www.scopus.com/pages/publications/84879736687

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84879736687&origin=recordpage

U2 - 10.1109/PVSC.2008.4922663

DO - 10.1109/PVSC.2008.4922663

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424416417

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 33rd IEEE Photovoltaic Specialists Conference (PVSC 2008)

Y2 - 11 May 2008 through 16 May 2008

ER -

InGaN/Si heterojunction tandem solar cells

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