InGaN pn-junctions grown by PA-MBE : Material characterization and fabrication of nanocolumn electroluminescent devices

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

5 Scopus Citations
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Author(s)

  • I. Gherasoiu
  • K. M. Yu
  • L. Reichertz
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Pages (from-to)393-397
Journal / PublicationJournal of Crystal Growth
Volume425
Online published12 Feb 2015
Publication statusPublished - 1 Sep 2015

Abstract

PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for nitride semiconductors while silicon and more recently germanium are the n-dopants of choice. In this paper, therefore we analyze the quantitative limits for Mg and Ge incorporation on GaN and InGaN with high In content. We also discuss the challenges posed by the growth and characterization of InGaN pn-junctions and we discuss the properties of large area, long wavelength nanocolumn LEDs grown on silicon (1 1 1) by PA-MBE.

Research Area(s)

  • A1. Doping, A1. Nanostructures, A3. Molecular beam epitaxy, B1. Nitrides, B3. Light emitting diodes

Citation Format(s)