TY - JOUR
T1 - InGaN pn-junctions grown by PA-MBE
T2 - Material characterization and fabrication of nanocolumn electroluminescent devices
AU - Gherasoiu, I.
AU - Yu, K. M.
AU - Reichertz, L.
AU - Walukiewicz, W.
PY - 2015/9/1
Y1 - 2015/9/1
N2 - PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for nitride semiconductors while silicon and more recently germanium are the n-dopants of choice. In this paper, therefore we analyze the quantitative limits for Mg and Ge incorporation on GaN and InGaN with high In content. We also discuss the challenges posed by the growth and characterization of InGaN pn-junctions and we discuss the properties of large area, long wavelength nanocolumn LEDs grown on silicon (1 1 1) by PA-MBE.
AB - PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for nitride semiconductors while silicon and more recently germanium are the n-dopants of choice. In this paper, therefore we analyze the quantitative limits for Mg and Ge incorporation on GaN and InGaN with high In content. We also discuss the challenges posed by the growth and characterization of InGaN pn-junctions and we discuss the properties of large area, long wavelength nanocolumn LEDs grown on silicon (1 1 1) by PA-MBE.
KW - A1. Doping
KW - A1. Nanostructures
KW - A3. Molecular beam epitaxy
KW - B1. Nitrides
KW - B3. Light emitting diodes
UR - http://www.scopus.com/inward/record.url?scp=84979960113&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84979960113&origin=recordpage
U2 - 10.1016/j.jcrysgro.2015.02.015
DO - 10.1016/j.jcrysgro.2015.02.015
M3 - RGC 21 - Publication in refereed journal
SN - 0022-0248
VL - 425
SP - 393
EP - 397
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -