Influences of ion-induced defects on growth of copper-phthalocyanine film on graphene substrates

Influences of argon ion-induced defects on growth of copper-phthalocyanine (CuPc) films on graphene were studied with atomic force microscope, X-ray diffraction, and high-resolution electron energy-loss spectroscopy (HREELS). Points defects and edges on graphene were found to be favorable sites for initial nucleation of CuPc. On as-grown graphene substrate with low defect density, CuPc nucleation begins at edges of the graphene sheets and then further grows into large islands with regular edges and smooth surfaces. On graphene subjected to argon ion treatment, which is known to induce surface defects, CuPc begins to nucleate at the defect positions, giving rise to crystals of much smaller sizes than those grown on a pristine graphene substrate. Such ion-induced modifications are correlated to changes in HREELS spectra of the corresponding CuPc films. © 2012 American Chemical Society.