INFLUENCE OF THE INTERNAL ELECTRIC FIELD ON THE DIFFUSION OF GROUP V ELEMENTS IN SILICON.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • M. I. Vasilevskii
  • V. A. Panteleev

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)33-36
Journal / PublicationSoviet Physics, Solid State (English translation of Fizika Tverdogo Tela)
Volume26
Issue number1
Publication statusPublished - Jan 1984

Abstract

The microscopic approach is used to derive equations for the diffusion of substitutional impurities in silicon, taking account of the impurity-vacancy interaction and the various charge states of free vacancies and E center type complexes. It is shown that the concentration dependence of the diffusion coefficient, and the vacancy wind, are field effects alongside the drift proper of a charged impurity in the field, which retards the diffusion, not accelerates it as is usually supposed. The diffusion coefficient in the field is calculated for the case of phosphorus. A monotonically increasing function D(N) is found.