TY - JOUR
T1 - INFLUENCE OF THE INTERNAL ELECTRIC FIELD ON THE DIFFUSION OF GROUP V ELEMENTS IN SILICON.
AU - Vasilevskii, M. I.
AU - Panteleev, V. A.
PY - 1984/1
Y1 - 1984/1
N2 - The microscopic approach is used to derive equations for the diffusion of substitutional impurities in silicon, taking account of the impurity-vacancy interaction and the various charge states of free vacancies and E center type complexes. It is shown that the concentration dependence of the diffusion coefficient, and the vacancy wind, are field effects alongside the drift proper of a charged impurity in the field, which retards the diffusion, not accelerates it as is usually supposed. The diffusion coefficient in the field is calculated for the case of phosphorus. A monotonically increasing function D(N) is found.
AB - The microscopic approach is used to derive equations for the diffusion of substitutional impurities in silicon, taking account of the impurity-vacancy interaction and the various charge states of free vacancies and E center type complexes. It is shown that the concentration dependence of the diffusion coefficient, and the vacancy wind, are field effects alongside the drift proper of a charged impurity in the field, which retards the diffusion, not accelerates it as is usually supposed. The diffusion coefficient in the field is calculated for the case of phosphorus. A monotonically increasing function D(N) is found.
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M3 - RGC 21 - Publication in refereed journal
SN - 0584-5807
VL - 26
SP - 33
EP - 36
JO - Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela)
JF - Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela)
IS - 1
ER -