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INFLUENCE OF TEMPERATURE AND ION KINETIC ENERGY ON SURFACE ROUGHNESS OF THIN FILMS FABRICATED BY DUAL PLASMA DEPOSITION

  • L.P. Wang
  • , K.Y. Fu
  • , X.B. Tian
  • , B.Y. Tang
  • , P.K. Chu

    Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

    Abstract

    The surface roughness of thin films affects the crystalline properties as well as their applications and is preferably as small as possible. In our experiments on the fabrication of CeO2 thin films on Si(100) substrate by dual plasma deposition, we investigate the influence of the substrate temperature and ion kinetic energy on the surface roughness. The roughness decrease with increasing substrate temperature, possibly due to enhanced diffusion of adatoms. A higher ion bombardment energy has a similar effect and it is also believed to be related to the surface diffusion of adatoms. We have also found that when a DC voltage is applied to the substrate and the film is thick to withstand electrical breakdown, the surface is rougher. On the other hand, when the film is thin and the applied DC voltage can cause breakdown in the film, the film exhibits smaller results. We will present our experimental results as well as a mechanism to explain the data.
    Original languageEnglish
    Title of host publicationProceedings of MRS Meetings
    Subtitle of host publicationSymposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures
    EditorsJ.G. Amar, G. Gilmer, J. Sanchez, R. Murty
    Pages283
    Volume672
    Publication statusPublished - Apr 2001
    Event2001 MRS Spring Meeting -
    Duration: 17 Apr 200120 Apr 2001

    Conference

    Conference2001 MRS Spring Meeting
    Period17/04/0120/04/01

    Bibliographical note

    Research Unit(s) information for this publication is provided by the author(s) concerned.

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