Abstract
The surface roughness of thin films affects the crystalline properties as well as their applications and is preferably as small as possible. In our experiments on the fabrication of CeO2 thin films on Si(100) substrate by dual plasma deposition, we investigate the influence of the substrate temperature and ion kinetic energy on the surface roughness. The roughness decrease with increasing substrate temperature, possibly due to enhanced diffusion of adatoms. A higher ion bombardment energy has a similar effect and it is also believed to be related to the surface diffusion of adatoms. We have also found that when a DC voltage is applied to the substrate and the film is thick to withstand electrical breakdown, the surface is rougher. On the other hand, when the film is thin and the applied DC voltage can cause breakdown in the film, the film exhibits smaller results. We will present our experimental results as well as a mechanism to explain the data.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of MRS Meetings |
| Subtitle of host publication | Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures |
| Editors | J.G. Amar, G. Gilmer, J. Sanchez, R. Murty |
| Pages | 283 |
| Volume | 672 |
| Publication status | Published - Apr 2001 |
| Event | 2001 MRS Spring Meeting - Duration: 17 Apr 2001 → 20 Apr 2001 |
Conference
| Conference | 2001 MRS Spring Meeting |
|---|---|
| Period | 17/04/01 → 20/04/01 |
Bibliographical note
Research Unit(s) information for this publication is provided by the author(s) concerned.Fingerprint
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