Influence of sublayer atoms on Si(100) surface reconstructions

C. S. Guo, W. J. Fan, R. Q. Zhang

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

1 Citation (Scopus)

Abstract

Influence of sublayer atoms on Si(100) surface reconstruction has been examined with density functional theory and molecular dynamic simulation. We found that the displacements of sublayer atoms under the buckled dimer affect the motions of their neighboring atoms and thus play an important role in determining the surface reconstructions. The present results reveal the relationship between the surface dimer reconstruction and the motion of the sublayer atoms and provide an account for experimental observations of Si(100) surface reconstructions at very low temperatures. © 2006 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)553-556
JournalSolid State Communications
Volume137
Issue number10
DOIs
Publication statusPublished - Mar 2006

Research Keywords

  • A. Si(100) surface
  • D. Sublayer
  • D. Surface reconstruction
  • E. Density Functional theory
  • E. Molecular dynamic simulation

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