Influence of stacking fault energy on deformation mechanism and dislocation storage capacity in ultrafine-grained materials

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Z. W. Wang
  • Y. B. Wang
  • X. Z. Liao
  • Y. H. Zhao
  • E. J. Lavernia
  • Z. Horita
  • T. G. Langdon

Detail(s)

Original languageEnglish
Pages (from-to)52-55
Journal / PublicationScripta Materialia
Volume60
Issue number1
Online published9 Sept 2008
Publication statusPublished - Jan 2009
Externally publishedYes

Abstract

Partial dislocation emission from grain boundaries in metals with medium-to-high stacking fault energies is observed primarily in the grain size range of a few tens of nanometers. Here we report that a reduction in the stacking fault energy permits the emission of partial dislocations from grain boundaries in ultrafine-grained materials with grain sizes significantly larger than 100 nm and this produces twinning. Such twins are effective in increasing the dislocation storage capacity, which may be used to improve the ductility. © 2008 Acta Materialia Inc.

Research Area(s)

  • Deformation mechanism, Stacking fault energy, Ultrafine-grained materials

Citation Format(s)

Influence of stacking fault energy on deformation mechanism and dislocation storage capacity in ultrafine-grained materials. / Wang, Z. W.; Wang, Y. B.; Liao, X. Z. et al.
In: Scripta Materialia, Vol. 60, No. 1, 01.2009, p. 52-55.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review