Influence of sputtering damage on chemical interactions at Cr-SiO2 interfaces

A. Cros; A. G. Schrott; R. D. Thompson; K. N. Tu

doi:10.1063/1.97026

Influence of sputtering damage on chemical interactions at Cr-SiO₂ interfaces

A. Cros, A. G. Schrott, R. D. Thompson, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

Abstract

The interaction of SiO₂ surfaces with ultrathin layers of 4-16 Å of Cr evaporated in ultrahigh vacuum has been studied by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The surfaces were treated either by Ar sputtering, sputtering, and simultaneous annealing, or by annealing in O₂. A room-temperature reaction occurs on sputtered samples and produces a new XPS peak at a binding energy 4.9 eV lower than that of oxidized Si 2p and a shoulder in the O 1s line. These effects are less pronounced in sputtered-annealed samples and insignificant in nonsputtered ones. Our results suggest the presence of silicon in a Cr-rich environment which is at a maximum concentration away from the SiO₂-Cr interface, following a buffer region richer in oxygen.

Original language	English
Pages (from-to)	1547-1549
Journal	Applied Physics Letters
Volume	48
Issue number	22
DOIs	https://doi.org/10.1063/1.97026
Publication status	Published - 2 Jun 1986
Externally published	Yes

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title = "Influence of sputtering damage on chemical interactions at Cr-SiO2 interfaces",

abstract = "The interaction of SiO2 surfaces with ultrathin layers of 4-16 {\AA} of Cr evaporated in ultrahigh vacuum has been studied by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The surfaces were treated either by Ar sputtering, sputtering, and simultaneous annealing, or by annealing in O2. A room-temperature reaction occurs on sputtered samples and produces a new XPS peak at a binding energy 4.9 eV lower than that of oxidized Si 2p and a shoulder in the O 1s line. These effects are less pronounced in sputtered-annealed samples and insignificant in nonsputtered ones. Our results suggest the presence of silicon in a Cr-rich environment which is at a maximum concentration away from the SiO2-Cr interface, following a buffer region richer in oxygen.",

author = "A. Cros and Schrott, {A. G.} and Thompson, {R. D.} and Tu, {K. N.}",

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T1 - Influence of sputtering damage on chemical interactions at Cr-SiO2 interfaces

AU - Cros, A.

AU - Schrott, A. G.

AU - Thompson, R. D.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1986/6/2

Y1 - 1986/6/2

N2 - The interaction of SiO2 surfaces with ultrathin layers of 4-16 Å of Cr evaporated in ultrahigh vacuum has been studied by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The surfaces were treated either by Ar sputtering, sputtering, and simultaneous annealing, or by annealing in O2. A room-temperature reaction occurs on sputtered samples and produces a new XPS peak at a binding energy 4.9 eV lower than that of oxidized Si 2p and a shoulder in the O 1s line. These effects are less pronounced in sputtered-annealed samples and insignificant in nonsputtered ones. Our results suggest the presence of silicon in a Cr-rich environment which is at a maximum concentration away from the SiO2-Cr interface, following a buffer region richer in oxygen.

AB - The interaction of SiO2 surfaces with ultrathin layers of 4-16 Å of Cr evaporated in ultrahigh vacuum has been studied by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The surfaces were treated either by Ar sputtering, sputtering, and simultaneous annealing, or by annealing in O2. A room-temperature reaction occurs on sputtered samples and produces a new XPS peak at a binding energy 4.9 eV lower than that of oxidized Si 2p and a shoulder in the O 1s line. These effects are less pronounced in sputtered-annealed samples and insignificant in nonsputtered ones. Our results suggest the presence of silicon in a Cr-rich environment which is at a maximum concentration away from the SiO2-Cr interface, following a buffer region richer in oxygen.

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DO - 10.1063/1.97026

M3 - RGC 21 - Publication in refereed journal

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JO - Applied Physics Letters

JF - Applied Physics Letters

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