Influence of self-assembled monolayer binding group on graphene transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Article number21603
Journal / PublicationApplied Physics Letters
Volume106
Issue number2
Publication statusPublished - 12 Jan 2015
Externally publishedYes

Abstract

Graphene transistors on self-assembled monolayer (SAM) modified dielectric substrates were fabricated and characterized in order to determine the influence SAM binding group has on device properties. It was found that silane based alkyl SAMs had little to no influence in doping graphene transistors, while phosphonic acid based ones caused n-type doping of graphene transistors with a charge neutrality point shift of over 10 V. It was also discovered that alkyl SAM packing density influenced the doping magnitude. Due to substrate surface charge trap quenching, these SAMs independent of binding group enhanced charge mobility of graphene transistors compared to ones on bare oxide substrates.

Citation Format(s)

Influence of self-assembled monolayer binding group on graphene transistors. / Cernetic, Nathan; Hutchins, Daniel O.; Ma, Hong; Jen, Alex K.-Y.

In: Applied Physics Letters, Vol. 106, No. 2, 21603, 12.01.2015.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review