Influence of reactive gas pressure on the deposition of an AlN protective film for organic photoconductor

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

9 Scopus Citations
View graph of relations

Author(s)

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)123-126
Journal / PublicationThin Solid Films
Volume315
Issue number1-2
Publication statusPublished - 2 Mar 1998

Abstract

The deposition of a protective AlN film for hardening and smoothing of organic photoconductor (OPC) surface is an effective method to prolong the operating lifetime of the OPC. In this work, the electrophotographic properties, surface microhardness and surface roughness of AlN coated OPC as a function of N2 gas pressure during the sputtering of AlN film were systematically studied and optimized. When the N2 partial pressure increases, the surface roughness increases and the surface hardness decreases. When the N2 pressure is around 2.7 × 10-1 Pa (2 mTorr), the electrophotographic properties reach optimized conditions. When the pressure is increased to 5.3 × 10-1 Pa (4 mTorr), the surface roughness increases quickly, the surface hardness decreases, and the electrophotographic properties can deteriorate quickly as a result of the target poisoning phenomenon during the sputtering process. From this work, it is clearly shown that the deposition of AlN protective film can effectively increase the surface hardness of an OPC without causing a deterioration on the electrophotographic properties of the OPC, thereby prolonging the operating lifetime of the OPC. In fact, AIN coated OPC is expected to have a better electrophotographic performance in terms of image development. © 1998 Elsevier Science S.A.

Research Area(s)

  • AlN film, Electrophotographic properties, Microhardness, N2 pressure, Organic photoconductor