Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Szu-Ying Chen
  • Chiu-Yen Wang
  • Alexandra C. Ford
  • Jen-Chun Chou
  • Yi-Chung Wang
  • Feng-Yun Wang
  • Hsiang-Chen Wang
  • Ali Javey
  • Jon-Yiew Gan
  • Lih-Juann Chen
  • Yu-Lun Chueh

Detail(s)

Original languageEnglish
Pages (from-to)2654-2659
Journal / PublicationPhysical Chemistry Chemical Physics
Volume15
Issue number8
Publication statusPublished - 28 Feb 2013

Abstract

The influence of the catalyst materials on the electron transport behaviors of InAs nanowires (NWs) grown by a conventional vapor transport technique is investigated. Utilizing the NW field-effect transistor (FET) device structure, ∼20% and ∼80% of Au-catalyzed InAs NWs exhibit strong and weak gate dependence characteristics, respectively. In contrast, ∼98% of Ni-catalyzed InAs NWs demonstrate a uniform n-type behavior with strong gate dependence, resulting in an average OFF current of ∼10-10 A and a high I ON/IOFF ratio of >104. The non-uniform device performance of Au-catalyzed NWs is mainly attributed to the non-stoichiometric composition of the NWs grown from a different segregation behavior as compared to the Ni case, which is further supported by the in situ TEM studies. These distinct electrical characteristics associated with different catalysts were further investigated by the first principles calculation. Moreover, top-gated and large-scale parallel-array FETs were fabricated with Ni-catalyzed NWs by contact printing and channel metallization techniques, which yield excellent electrical performance. The results shed light on the direct correlation of the device performance with the catalyst choice.© 2013 the Owner Societies.

Citation Format(s)

Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors. / Chen, Szu-Ying; Wang, Chiu-Yen; Ford, Alexandra C.; Chou, Jen-Chun; Wang, Yi-Chung; Wang, Feng-Yun; Ho, Johnny C.; Wang, Hsiang-Chen; Javey, Ali; Gan, Jon-Yiew; Chen, Lih-Juann; Chueh, Yu-Lun.

In: Physical Chemistry Chemical Physics, Vol. 15, No. 8, 28.02.2013, p. 2654-2659.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review