Abstract
The deposition of a protective film to increase the hardness of an organic photoconductor (OPC) surface is an effective method to lengthen the lifetime of the OPC. In this work, AlN protective films were deposited onto OPC samples by rf reactive magnetron sputtering with low substrate temperature. The AlN films were deposited with optimized sputtering conditions and exhibited very high transmissivity in the visible wavelength range 300-800 nm. The films caused a remarkable increase in the hardness of the OPC surface, by between 32 and 62%. The acceptance voltage, dark decay rate, photodischarge rate, difference between the residual potential and the acceptance voltage of the OPC protected by AlN film were improved. These results show AlN is a suitable protective film for OPC.
| Original language | English |
|---|---|
| Pages (from-to) | 387-390 |
| Journal | Journal of Electronic Materials |
| Volume | 26 |
| Issue number | 4 |
| Publication status | Published - Apr 1997 |
Research Keywords
- AlN film
- Electrophotographic properties
- Microhardness
- Organic photoconductor
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