In-doped Ga 2O 3 nanobelt based photodetector with high sensitivity and wide-range photoresponse

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Wei Tian
  • Tianyou Zhai
  • Shimou Chen
  • Xi Wang
  • Meiyong Liao
  • Dmitri Golberg
  • Yoshio Bando

Detail(s)

Original languageEnglish
Pages (from-to)17984-17991
Journal / PublicationJournal of Materials Chemistry
Volume22
Issue number34
Publication statusPublished - 14 Sep 2012
Externally publishedYes

Abstract

Doping is an efficient way to tune the electrical and photoelectrical performances of one-dimensional semiconductors which have potential application as active materials in high performance nanoscale devices. Ga 2O 3 is one the most promising 1D semiconducting systems. However, controlled doping of Ga 2O 3 toward higher photoelectrical performances in Ga 2O 3-based photodetectors remains problematic. Herein high-quality In-doped Ga 2O 3 nanobelts are fabricated through a facile and effective thermal evaporation process. Their morphology and structure are systematically characterized. Indium has successfully been doped into the Ga 2O 3 nanobelts based on the data obtained. The In-doped Ga 2O 3 nanobelt-based photodetector has shown a higher sensitivity (9.99 × 10 4%), responsivity (5.47 × 10 2 A W -1), quantum efficiency (2.72 × 10 5%) and less rise/decay time (1/0.6 s), i.e. much better figures compared with not only the undoped Ga 2O 3 nanobelt/film but also other reported doped photodetectors. In addition, the above photodetector has a wider range photoresponse. In doping has led to significant improvements in the values of key parameters of the Ga 2O 3-based photodetector, beneficial for the fabrication of high-performance photodetectors. © 2012 The Royal Society of Chemistry.

Citation Format(s)

In-doped Ga 2O 3 nanobelt based photodetector with high sensitivity and wide-range photoresponse. / Tian, Wei; Zhi, Chunyi; Zhai, Tianyou; Chen, Shimou; Wang, Xi; Liao, Meiyong; Golberg, Dmitri; Bando, Yoshio.

In: Journal of Materials Chemistry, Vol. 22, No. 34, 14.09.2012, p. 17984-17991.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review